
Memories BRAM80K
Speedster22i Macro Cell Library
AchronixSemiconductorProprietary PAGE 101
Figure 6-5: No-Change, Latched Mode Timing Diagram
Figure 6-6: No-Change, Registered Mode Timing Diagram
Support for Read-First (Read-Before-Write) Memory Operations
The BRAM80K memory does not directly support read‐first or read‐before‐write mode of
operation.Ifthisbehaviorisdetectedbysynthesis,awarningwillbeissuedinthesynthesis
log file and a register file will be synthesized. To implement a more efficient mapping of a
‘read‐first’ memory,
the user should update his code to use an Achronix
BRAM80K_READ_FIRST soft macro. This soft macro block combines a BRAM80K memory
block with LUT circuitry to convert the read‐first memory access into a separate read
operation followed by a write operation at twice the clock rate of the requested
clock
frequency.NotethattheuserwillhavetoprovidetheBRAM80K_READ_FIRSTmacrowitha
2xclockwithoneoftheon‐chipPLLs.
Memory Initialization
WhentheBRAM80Kmemory isconfiguredwithportwidthsof1,2,4,8,16,or32bitswide,
the initial memory contents may be defined by initializing the 256 256‐bit parameters
initd_000throughinitd_255.Thedatamemoryisorganizedaslittle‐endianwithbit0mapped
tobitzero
ofparameterinitd_000andbit65535mappedtobit255ofparameterinitd_255.
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